Preliminary Technical Information
TrenchMV TM
Power MOSFET
IXTA240N055T7
V DSS
I D25
R DS(on)
= 55 V
= 240 A
≤ 3.6 m Ω
N-Channel Enhancement Mode
Avalanche Rated
Symbol
Test Conditions
Maximum Ratings
TO-263 (7-lead) (IXTA..7)
V DSS
V DGR
T J = 25 ° C to 175 ° C
T J = 25 ° C to 175 ° C; R GS = 1 M Ω
55
55
V
V
V GSM
Transient
± 20
V
1
I D25
I LRMS
I DM
I AR
E AS
dv/dt
T C = 25 ° C
Package Current Limit, RMS
T C = 25 ° C, pulse width limited by T JM
T C = 25 ° C
T C = 25 ° C
I S ≤ I DM , di/dt ≤ 100 A/ μ s, V DD ≤ V DSS
240
120
650
25
1.0
3
A
A
A
A
J
V/ns
7
Pin-out:1 - Gate
2, 3 - Source
4 - NC (cut)
5,6,7 - Source
TAB (8) - Drain
(TAB)
T J ≤ 175 ° C, R G = 5 Ω
P D
T C = 25 ° C
480
W
T J
T JM
T stg
-55 ... +175
175
-40 ... +175
° C
° C
° C
Features
Ultra-low On Resistance
T L
T SOLD
Weight
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 seconds
300
260
3
° C
° C
g
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 ° C Operating Temperature
Advantages
Easy to mount
Symbol Test Conditions
(T J = 25 ° C unless otherwise specified)
Characteristic Values
Min. Typ. Max.
Space savings
High power density
BV DSS
V GS(th)
I GSS
V GS = 0 V, I D = 250 μ A
V DS = V GS , I D = 250 μ A
V GS = ± 20 V, V DS = 0 V
55
2.0
4.0
± 200
V
V
nA
Applications
Automotive
- Motor Drives
- High Side Switch
- 12V Battery
I DSS
R DS(on)
V DS = V DSS
V GS = 0 V
V GS = 10 V, I D = 25 A, Note 1
T J = 150 ° C
2.7
5
250
3.6
μ A
μ A
m Ω
- ABS Systems
DC/DC Converters and Off-line UPS
Primary- Side Switch
High Current Switching
Applications
DS99685 (11/06)
? 2006 IXYS CORPORATION All rights reserved
相关PDF资料
IXTA260N055T2-7 MOSFET N-CH 55V 260A TO-263
IXTA2N100P MOSFET N-CH 1000V 2A TO-263
IXTA2N100 MOSFET N-CH 1000V 2A TO-263
IXTA2N80 MOSFET N-CH 800V 2A TO-263
IXTA300N04T2-7 MOSFET N-CH 40V 300A TO-263
IXTA32N20T MOSFET N-CH 200V 32A TO-263
IXTA36N30P MOSFET N-CH 300V 36A TO-263
IXTA3N100D2 MOSFET N-CH 1000V 3A D2PAK
相关代理商/技术参数
IXTA24P085T 功能描述:MOSFET 24 Amps 85V 0.065 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA260N055T2-7 功能描述:MOSFET 260 Amps 55V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA26P10T 功能描述:MOSFET TenchP Power MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA26P20P 功能描述:MOSFET -26.0 Amps -200V 0.170 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA27N20T 功能描述:MOSFET 27 Amps 200V 100 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA28P065T 功能描述:MOSFET 28 Amps 65V 0.045 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA2N100 功能描述:MOSFET 2 Amps 1000V 7 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTA2N100P 功能描述:MOSFET 2 Amps 1000V 7.5 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube